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| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR GRAPM LED DISPLAY LBD1311URFUGHYS-XX/RP55 DATA SHEET DOC. NO REV. DATE : QW0905- LBD1311URFUGHYS-XX/RP55 : : B 19 - Oct. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 1/9 Package Dimensions PIN NO.1 26.0 10.5 LBD1311URFUGHYS-XX/RP55 LIGITEK A3 A2 A1 F1 B3 B2 B1 F2 18.5 36.0 2.54X11 =27.94 E1 E2 E3 F3 D1 D2 D3 C1 C2 C3 O 0.45 TYP 22.4 5.50.5 Note : 1.All dimension are in millimeters and (lnch) tolerance is 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 2/9 Internal Circuit Diagram 1 A1 A2 A3 20 B1 B2 B3 14 C1 C2 C3 2 34 15 17 18 19 16 E1 E2 E3 F1 11 12 13 24 F2 F3 D1 D2 D3 8 9 10 567 21 22 23 URF HYS UG LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 3/9 Electrical Connection PIN NO.1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LBD1311URFUGHYS-XX/RP55 Common Cathode A1,A2,A3 Anode A1 Anode A2 Anode A3 Anode E1 Anode E2 Anode E3 Anode D1 Anode D2 Anode D3 Anode C1 Anode C2 Anode C3 Common Cathode C1,C2,C3 Common Cathode D1,D2,D3 Common Cathode E1,E2,E3 Anode B1 Anode B2 Anode B3 Common Cathode B1,B2,B3 Anode F1 Anode F2 Anode F3 Common Cathode F1,F2,F3 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 4/9 Absolute Maximum Ratings at Ta=25 MAXIMUM RATING PARAMETER RED Power Dissipation Per Die Peak Forward Current Per Die (1/10 Duty Cycle,0.1ms Pulse Width) Forward Current Per Chip Reverse Voltage Per Die Electrostatic Discharge( * ) Operation Temperature Range Storage Temperature Range 120 130 GREEN 75 60 YELLOW 75 60 mW mA UNIT 50 5 30 5 2000 -25 to +85 -25 to +85 30 5 mA V V Solder Temperature 1/16 inch Below Seating Plane for 3 Seconds at 260 Electricity or power surge will the Use of anti-electrosatic * Static is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly glove these All equipment and machinery grounded. ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25 RED(A1,B1,C1,D1,E1) PARAMETER Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio SYMBOL Iv MIN. 14 TYP. 24 20 630 1.5 1.8 2.4 10 2:1 MAX. UNIT mcd nm nm V TEST CONDITION IF=10mA IF=20mA IF=20mA IF=20mA VR=5V IF=10mA d VF IR Iv-m A UG(A3,B3,C3,D3,E3) PARAMETER Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio SYMBOL Iv MIN. 13 TYP. 22 20 587 1.7 1.9 2.8 10 2:1 MAX. UNIT mcd nm nm V TEST CONDITION IF=10mA IF=20mA IF=20mA IF=20mA VR=5V IF=10mA d VF IR Iv-m A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 5/9 ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25 YELLOW(A2,B2,C2,D2,E2) PARAMETER Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio SYMBOL Iv MIN. 18 TYP. 30 15 587 1.7 1.9 2.8 10 2:1 MAX. UNIT mcd nm nm V TEST CONDITION IF=10mA IF=20mA IF=20mA IF=20mA VR=5V IF=10mA d VF IR Iv-m A HYS(F1,F2,F3) PARAMETER Average Luminous Intensity Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Die Reverse Current Per Die Luminous Intensity Matching Ratio SYMBOL Iv MIN. 108 TYP. 180 15 587 1.7 1.9 2.8 10 2:1 MAX. UNIT mcd nm nm V TEST CONDITION IF=20mA IF=20mA IF=20mA IF=20mA VR=5V IF=10mA d VF IR Iv-m A Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. The luminous intensity data did not including 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 6/9 Typical Electro-Optical Characteristics Curve URF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 3.0 100 1000 Forward Current(mA) Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0 10 1.0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25 Relative Intensity@20mA Normalize@25 -40 -20 -0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature() Ambient Temperature() Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page7/9 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 10 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25 Relative Intensity@20mA Normalize @25 -40 -20 0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature() Ambient Temperature() Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 8/9 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 1.5 2.0 2.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25 Relative Intensity@20mA Normalize @25 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature() Ambient Temperature() Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 9/9 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 5 2.RH=90 %~95% 3.t=240hrs 2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 5&-405 (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 5 2.Dwell time= 10 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 5 2.Dwell time=5 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
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